| 摘要 |
PURPOSE: A metal line formation method of semiconductor device is provided to prevent a dishing and a scratch due to CMP(Chemical Mechanical Polishing) by minimize the total thickness for polishing. CONSTITUTION: A first interlayer dielectric(32) having a contact hole(32a) and a second interlayer dielectric(34) having a trench(34a) are formed on a semiconductor substrate(31), thereby forming dual damascene pattern. A diffusion barrier layer(35) is formed on the dual damascene pattern. A metal seed film(36) is formed at bottom and sidewalls of the dual damascene pattern. A metal plate film is formed in the dual damascene pattern by using an electroplating. The metal plate film and the diffusion barrier layer(35) formed on the second interlayer dielectrics(34) are removed by using CMP.
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