发明名称 |
APPARATUS FOR GENERATING POWER-UP SIGNAL |
摘要 |
PURPOSE: An apparatus for generating a power-up signal is provided to reduce a variation of power-up time and operate stably a chip by using a diode instead of a resistance in a voltage sense portion. CONSTITUTION: A voltage sense portion(10) is formed with a diode(D1) and a resistance(R3) connected between an external supply voltage terminal(Vext) and a ground voltage terminal(Vss). A level control portion(20) is formed with an NMOS transistor(N2). A power-up signal generation portion(30) is formed with a resistance(R4) and an NMOS transistor(N3) connected between the external supply voltage terminal(Vext) and the ground voltage terminal(Vss). A buffering portion(40) is formed with an inverter(I2) connected between an external supply voltage terminal(Vext) and a ground voltage terminal(Vss) in order to buffer an output signal(det) applied from the power-up signal generation portion(30).
|
申请公布号 |
KR20020095913(A) |
申请公布日期 |
2002.12.28 |
申请号 |
KR20010034268 |
申请日期 |
2001.06.18 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM, YONG MI;LEE, GANG SEOL |
分类号 |
G11C5/14;(IPC1-7):G11C5/14 |
主分类号 |
G11C5/14 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|