发明名称 APPARATUS FOR GENERATING HIGH VOLTAGE IN SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: An apparatus for generating a high voltage in a semiconductor device is provided to prevent a malfunction of a high voltage generation circuit by intercepting a current path of an external supply voltage generation circuit to the high voltage generation circuit. CONSTITUTION: A voltage pumping portion(30) pumps a voltage according to a pumping clock signals(pump-clk1 to pump-clk4) applied from an oscillator and a high voltage pumping enable signal(ppe) applied from a detection portion. The voltage pumping portion(30) includes a control portion(40). The control portion(40) is driven according to the high voltage pumping enable signal(ppe) applied from the detection portion. The control portion(40) is connected between the third node(node3) and an external supply voltage terminal(Vext) in order to control an NMOS transistor(N1) according to the high voltage pumping enable signal(ppe) applied from the detection portion. The control portion is formed with an NMOS transistor(N7).
申请公布号 KR20020095912(A) 申请公布日期 2002.12.28
申请号 KR20010034267 申请日期 2001.06.18
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, U YEONG
分类号 G11C5/14;(IPC1-7):G11C5/14 主分类号 G11C5/14
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