| 摘要 |
PURPOSE: A method for fabricating a phase shift mask is provided to form a chrome pattern without a defect caused by particles, by eliminating resist and chrome in a region necessary for forming a pattern while using a CrxFy layer. CONSTITUTION: The resist in a region(10) unnecessary for forming a pattern is exposed and developed. The exposed region of the resist is exposed to a fluorine gas plasma state to form a mask layer which is stable for a chrome etch solution. The resist in the region(20) necessary for forming the pattern is eliminated. The chrome in the region necessary for forming the pattern is removed.
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