| 摘要 |
PURPOSE: A method for fabricating the gate of a flash memory device is provided to minimize the loss of an insulation layer on a control gate in an etch process, by performing an etch process for forming a floating gate before insulated sidewalls are simultaneously formed on the side surface of the control gate in a cell region and a peripheral region. CONSTITUTION: A gate insulation layer(202) is formed on a substrate(200) in which a cell region(III) and a peripheral region(IV) are defined. The first conductive layer and the first insulation layer are sequentially formed on the gate insulation layer in the cell region. The second conductive layer, the third insulation layer and the second insulation layer are sequentially formed on the first insulation layer in the cell region and on the gate insulation layer in the peripheral region. The second insulation layer, the third conductive layer and the second conductive layer in the cell region and the peripheral region are etched to form each control gate. The first insulated sidewall(218a) is formed to cover the side surface of the control gate in the cell region and the peripheral region. A mask pattern covering the peripheral region and exposing the cell region is formed. The first conductive layer and the first insulation layer are etched to form a dielectric layer(206) and a floating gate under the control gate in the cell region by using the mask pattern. The mask pattern is eliminated.
|
