发明名称 |
METHOD OF SELECTIVE REMOVAL OF SIGE ALLOYS |
摘要 |
A method is disclosed of forming buried channel devices and surface channel devices on a heterostructure semiconductor substrate. In an embodiment, the method includes the steps of providing a structure including a first layer having a first oxidation rate disposed over a second layer having a second oxidation rate wherein the first oxidation rate is greater than the second oxidation rate, reacting said first layer to form a sacrificial layer, and removing said sacrificial layer to expose said second layer. |
申请公布号 |
WO02103760(A2) |
申请公布日期 |
2002.12.27 |
申请号 |
WO2002US18973 |
申请日期 |
2002.06.14 |
申请人 |
AMBERWARE SYSTEMS CORPORATION |
发明人 |
HAMMOND, RICHARD;CURRIE, MATTHEW |
分类号 |
H01L21/00;H01L21/31;H01L21/311;H01L21/316;H01L21/336;H01L21/469;H01L21/76;H01L21/8238;H01L21/8242;H01L21/8244;H01L29/10;H01L29/78 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|