| 摘要 |
<p>A magnetic memory which comprises two or more memory layers and two or more tunnel layers stacked in the layer thickness direction with the two or more memory layers electrically connected in series and has a difference between the resistance change caused by the magnetization inversion of the first layer group consisting of at least one selected from the two or more memory layers and the resistance change caused by the magnetization inversion of the second layer group consisting of at least one selected from the two or more memory layers.</p> |
