| 摘要 |
<p>A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a Group III- V material surface. The surface is then etched in a solution including HP and an oxidant for a preferably brief period, as little as a couple seconds to one hour. A preferred oxidant is H2O2. Morphology and light emitting properties of porous Group III- V material can be selectively controlled as a function of the type of metal deposited, doping type, doping level, metal thickness, whether emission is collected on or off the metal coated areas and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.</p> |
