| 摘要 |
A transistor structure is implemented which can achieve high current gain by causing electrons injected from an emitter to reach a collector. An InGaN graded layer, which is interposed between a p-type InGaN layer and an n-type GaN layer, includes an In composition that varies from 0% to 10%. A bandgap of the thin film structure is gradually reduced from the substrate side to the surface side. An AlN buffer layer is grown on an SiC substrate by 100 nm thick, followed by growing a Si-doped GaN layer used for forming an ohmic electrode. A Si-doped GaN layer (n-type GaN layer) is grown thereon, followed by growing an InGaN layer whose In composition is varied, and by growing, an Mg-doped InGaN (p-type GaN layer), thereby fabricating a heterojunction diode.
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