| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a through hole penetrating an electrode pad and a semiconductor substrate in which sufficient insulation can be ensured between the electrode pad and the semiconductor substrate on the sidewall of the through hole. SOLUTION: The semiconductor device comprises a silicon substrate 201 (semiconductor substrate), an element forming layer 202 (element) formed on one side 201a of the silicon substrate 201, an electrode pad 211 connected electrically with the element forming layer 202, a through hole 212 penetrating the electrode pad 221 and the silicon substrate 201, a via hole 209a made in an SiO2 film 209 (insulating film) on the electrode pad 221, and a wiring pattern 214 wherein the through hole 212 has diameter R2 at the part penetrating the silicon substrate 201 smaller than diameter R2 at the part penetrating the electrode pad 211. |
