发明名称 |
ETCHING SYSTEM FOR HIGH DIELECTRIC |
摘要 |
PROBLEM TO BE SOLVED: To provide an etching system comprising a substrate holding mechanism in which potential difference between the surface and the rear surface of a substrate of high dielectric material can be kept at a very small level in order to prevent cracking of the substrate at the time of machining. SOLUTION: The part for mounting a substrate is mirror finished in order to increase the contact area between a substrate and the mounting part and a metal film (foil) is formed on the rear surface of a jig for retaining the substrate or a clamp so that a potential difference being generated between the surface and the rear surface of a high dielectric becomes very small during plasma irradiation (etching).
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申请公布号 |
JP2002373887(A) |
申请公布日期 |
2002.12.26 |
申请号 |
JP20010182158 |
申请日期 |
2001.06.15 |
申请人 |
ULVAC JAPAN LTD |
发明人 |
HAYASHI TOSHIO;SATO MASAYUKI;TAKAISHI KOICHIRO |
分类号 |
C23F4/00;H01L21/302;H01L21/3065;(IPC1-7):H01L21/306 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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