发明名称 ETCHING SYSTEM FOR HIGH DIELECTRIC
摘要 PROBLEM TO BE SOLVED: To provide an etching system comprising a substrate holding mechanism in which potential difference between the surface and the rear surface of a substrate of high dielectric material can be kept at a very small level in order to prevent cracking of the substrate at the time of machining. SOLUTION: The part for mounting a substrate is mirror finished in order to increase the contact area between a substrate and the mounting part and a metal film (foil) is formed on the rear surface of a jig for retaining the substrate or a clamp so that a potential difference being generated between the surface and the rear surface of a high dielectric becomes very small during plasma irradiation (etching).
申请公布号 JP2002373887(A) 申请公布日期 2002.12.26
申请号 JP20010182158 申请日期 2001.06.15
申请人 ULVAC JAPAN LTD 发明人 HAYASHI TOSHIO;SATO MASAYUKI;TAKAISHI KOICHIRO
分类号 C23F4/00;H01L21/302;H01L21/3065;(IPC1-7):H01L21/306 主分类号 C23F4/00
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