Method and apparatus for manufacturing a semiconductor device and processing a substrate

摘要

A substrate processing apparatus includes a CVD (chemical vapor deposition) processing chamber and a RTO (rapid thermal oxidation) processing chamber. In the CVD processing chamber, a film growing process, in which thin amorphous film is deposited on a substrate, and an impurity removing process, in which specific impurities included in the grown amorphous film are removed, are repeatedly performed multiple times to provide an impurity removed amorphous film with good step coverage. Thus treated amorphous film on the substrate is then crystallized in the RTO process chamber to provide a crystalline film.