| 摘要 |
Dual-temperature photoresist dry stripping within a single chamber is disclosed. A semiconductor wafer is subjected to a first dry strip at a first, lower temperature, and then is subjected to a second dry strip at a second, higher temperature. Both dry strips are performed in the same chamber. The first and the second temperatures may be substantially 165° C. and 250° C., respectively. Both dry strips may be performed in a C2F6 and O2 gas mixture, such as at a substantially 2% ratio of the former to the latter. The disclosed dry stripping prevents substrate peeling.
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