METHOD FOR MANUFACTURING CONTACT HOLE IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a contact hole in a semiconductor device is provided to simplify manufacturing processes by simultaneously forming contact holes at a peripheral and cell region. CONSTITUTION: A gate oxide layer(2), a gate electrode(3) and a hard mask(4) are sequentially formed on a substrate(1) defined by a cell and peripheral region. An etch barrier layer(7) and an interlayer dielectric(8) are sequentially formed on the resultant structure. A photoresist pattern is formed to expose the substrate of the cell region and to expose the hard mask(4) of the peripheral region. The first contact hole(10) is formed by etching the interlayer dielectric and the etch barrier layer. After removing the photoresist pattern, an insulating spacer(11A) is formed at both sidewalls of the first contact hole(10). The second contact hole(13) is formed to expose the gate electrode of the peripheral region by etching the exposed hard mask using the insulating spacer(11A) as a mask.