| 摘要 |
An integrated circuit device is provided that has a split-gate type memory transistor, a first capacitor element and a second capacitor element formed on a common chip. The dielectric strength of each of the split-gate type memory transistor, the first capacitor element and the second capacitor element can be improved. An intermediate insulation film of the split-gate type memory transistor can include a thermal oxide film, an HTO film, a side-section insulation film, and another thermal oxide film. A dielectric film of the first capacitor element can include a thermal oxide film, an HTO film, and another thermal oxide film, while a dielectric film of the second capacitor element can include a thermal oxide film, an HTO film, a silicon nitride film, and another thermal oxide film.
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