发明名称 Copper electroplating composition for integrated circuit interconnection
摘要 A copper electroplating composition for integrated circuit interconnection is proposed, including a copper salt, an inorganic acid containing same anion as the copper salt, a suppressing agent and a polishing agent. This electroplating composition helps deposit copper into fine trenches with a high aspect ratio on a substrate, so as to form a surface-flat and void-free plated copper layer over the substrate by electroplating. It can therefore reduce the usage of polishing slurry and polishing time in a subsequent chemical mechanical polishing process, and also improve surface planarity of the copper later after being polished.
申请公布号 US2002195351(A1) 申请公布日期 2002.12.26
申请号 US20020121786 申请日期 2002.04.12
申请人 CHANG CHUN PLASTICS CO., LTD. 发明人 LU CHIH-SHENG;LUO LU-MING;SHIEH YAW-NAN;HO RAY-JAUNG
分类号 C25D3/38;C25D7/12;H01L21/28;H01L21/288;H01L21/768;(IPC1-7):C09D5/00;C23C16/00;C23C20/00 主分类号 C25D3/38
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