发明名称 |
Copper electroplating composition for integrated circuit interconnection |
摘要 |
A copper electroplating composition for integrated circuit interconnection is proposed, including a copper salt, an inorganic acid containing same anion as the copper salt, a suppressing agent and a polishing agent. This electroplating composition helps deposit copper into fine trenches with a high aspect ratio on a substrate, so as to form a surface-flat and void-free plated copper layer over the substrate by electroplating. It can therefore reduce the usage of polishing slurry and polishing time in a subsequent chemical mechanical polishing process, and also improve surface planarity of the copper later after being polished.
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申请公布号 |
US2002195351(A1) |
申请公布日期 |
2002.12.26 |
申请号 |
US20020121786 |
申请日期 |
2002.04.12 |
申请人 |
CHANG CHUN PLASTICS CO., LTD. |
发明人 |
LU CHIH-SHENG;LUO LU-MING;SHIEH YAW-NAN;HO RAY-JAUNG |
分类号 |
C25D3/38;C25D7/12;H01L21/28;H01L21/288;H01L21/768;(IPC1-7):C09D5/00;C23C16/00;C23C20/00 |
主分类号 |
C25D3/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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