| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an exposure method, an exposure apparatus and an X-ray mask by which a three-dimensional structure can be formed on a resist mask by a simple structure, and to provide a fine structure and a semiconductor device which are manufactured using these. SOLUTION: In the exposure method in which a resist film 9 is irradiated with an X-ray emitted from an X-ray source via an X-ray mask 5, secondary electrons are generated because members 5 and 6 except the film 9 which are so positioned that overlap a locus of the X-ray are irradiated with the X-ray, and are made to be incident into the film 9. By doing this, patterns 24, 26a-26d are transferred to the film 9.</p> |
