| 摘要 |
A semiconductor memory device is provided which ensures the symmetry of memory data transmission time and a high-speed operation and has large write/read operation margin with no need of increasing the chip area. By placing a horizontally long peripheral circuit section in the middle in the vertical direction of a semiconductor chip, placing a vertically long shift register section above and below and perpendicularly to the peripheral circuit section, and making the memory core and shift register arrangement symmetrical in the horizontal direction, the data/signal lines between the memory core and the shift register section can be made short and the symmetry of the interconnections can be maintained, which allows the implementation of a high-speed and large-margin semiconductor memory device. In addition, a faster semiconductor memory can be obtained by forming the shift register section by stacking shift registers each corresponding to a data block and selecting the order in which the shift registers are stacked so that the length of interconnections between the peripheral circuit and the shift register is minimized.
|
