Method of forming a polysilicon layer

摘要

A method of forming a polysilicon layer includes the steps of: loading a semiconductor substrate in a CVD reactor wherein a gate insulating layer is formed on the substrate; decompressing the reactor; depositing a first polysilicon layer on the substrate by flowing an SiH4 gas into the reactor; forming a plurality of Si-N bonds on the first polysilicon layer by maintaining atmospheric pressure of the reactor by filling the reactor with nitrogen gas; decompressing the reactor; and depositing a second polysilicon layer on the first polysilicon layer by flowing SiH4 gas into the reactor.