发明名称 |
Semiconductor device and method of fabricating the same |
摘要 |
The claimed invention relates to a semiconductor device and a method of fabricating the semiconductor device. More particularly, the claimed invention relates to a method of fabricating the semiconductor device in which parts of a gate electrode at the ends of a channel are lightly doped compared to the center part of the gate electrode, thereby eliminating a hump on a subthreshold current slope. To achieve the objects of the claimed invention, there is provided a semiconductor device that includes a semiconductor substrate divided into an isolation region and an active region. A gate oxide film is formed on a first upper surface of the active region. A gate electrode is formed on a second upper surface of the gate oxide film, the gate electrode having a first part and a second part. The first part is more lightly doped with impurities than the second part. A channel is formed in an upper end of the active region proximate the gate electrode. A source and a drain are formed in the active region on opposite sides of the gate electrode.
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申请公布号 |
US6498085(B2) |
申请公布日期 |
2002.12.24 |
申请号 |
US20000726441 |
申请日期 |
2000.12.01 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
JUNG JONG-WAN;NAM JEONG SEOK |
分类号 |
H01L29/78;H01L21/28;H01L21/336;H01L29/49;(IPC1-7):H01L21/320;H01L21/476;H01L21/265 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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