发明名称 An integrated circuit and a method for its production.
摘要 <p>PCT No. PCT/DE96/01109 Sec. 371 Date Jan. 6, 1998 Sec. 102(e) Date Jan. 6, 1998 PCT Filed Jun. 24, 1996 PCT Pub. No. WO97/03463 PCT Pub. Date Jan. 30, 1997An integrated circuit arrangement having at least two components has in a substrate, an insulation structure (4', 5) between the components which covers at least one side of a trench (3) and is thicker at the bottom of the trench than at the neck of the trench. The components are in this case arranged in different planes on the substrate surface and on the trench bottom. The insulation structure effects vertical insulation between the components.</p>
申请公布号 IN189112(B) 申请公布日期 2002.12.21
申请号 IN1996CA98519 申请日期 1996.05.30
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 LAU, FRANK, DR.;KREUTSCHNEIDER, WOLFGANG, DR.;ENGELHARDT, MANFRED, DR.
分类号 H01L21/76;H01L21/762;H01L21/763;H01L21/8234;H01L21/8246;H01L27/088;H01L27/112;(IPC1-7):B28D5/00 主分类号 H01L21/76
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