发明名称 NON-VOLATILE SEMICONDUCTOR MEMORY
摘要 <p>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory in which high speed and low power consumption data read can be performed, a high speed read region and a low power consumption read region can be set freely for a memory cell array. SOLUTION: This memory is provided with a block constituted of a plurality of memory cells in which memory cell units for storing data are connected to the same bit lines and different word lines. In the read operation of this block, a word line multiple/single selecting driver 9 multiply select the word lines and selects a plurality of memory cells. Also, the memory is provided with a separate mode in which a read operation can be performed in a state in which boosting voltage of a selected word line is dropped for this block. Single/multiple selection of word lines and boosting voltage are controlled with a control circuit 14 on the basis of a discrimination result of a comparing circuit 22 for comparing information stored in a register 21 with a row address.</p>
申请公布号 JP2002367390(A) 申请公布日期 2002.12.20
申请号 JP20010178120 申请日期 2001.06.13
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KONO KAZUYUKI;HATTORI NORIO;MORI TOSHIKI
分类号 G11C16/06;G11C16/02;G11C16/04;(IPC1-7):G11C16/06 主分类号 G11C16/06
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