发明名称 |
NON-VOLATILE SEMICONDUCTOR MEMORY |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory in which high speed and low power consumption data read can be performed, a high speed read region and a low power consumption read region can be set freely for a memory cell array. SOLUTION: This memory is provided with a block constituted of a plurality of memory cells in which memory cell units for storing data are connected to the same bit lines and different word lines. In the read operation of this block, a word line multiple/single selecting driver 9 multiply select the word lines and selects a plurality of memory cells. Also, the memory is provided with a separate mode in which a read operation can be performed in a state in which boosting voltage of a selected word line is dropped for this block. Single/multiple selection of word lines and boosting voltage are controlled with a control circuit 14 on the basis of a discrimination result of a comparing circuit 22 for comparing information stored in a register 21 with a row address.</p> |
申请公布号 |
JP2002367390(A) |
申请公布日期 |
2002.12.20 |
申请号 |
JP20010178120 |
申请日期 |
2001.06.13 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
KONO KAZUYUKI;HATTORI NORIO;MORI TOSHIKI |
分类号 |
G11C16/06;G11C16/02;G11C16/04;(IPC1-7):G11C16/06 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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