| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory device in which constitution of an amplifier (sense amplifier) is prevented from becoming complex and high speed read-out can be performed. SOLUTION: This device is provided with one TMR element 4, a memory cell 52 comprising one NMOS transistor 5 and memory cells 52, word lines WL connected to a gate of the NMOS transistor 5, bit lines BL connected to the TMR element 4 through the NMOS transistor 5, a reference bit line BLr connected to a resistance element 14 through the NMOS transistor 5, and a sense amplifier 53 connected to the bit lines BL and the reference bit line BLr. And at the time of read-out of data, potential difference caused between the bit lines BL and the reference bit line BLr is read out using the sense amplifier 53.
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