| 摘要 |
PROBLEM TO BE SOLVED: To actualize a surge-protecting element which has improved surface tolerance. SOLUTION: In a P-type semiconductor substrate 1, a 1st N-type conductive region 2 and a 2nd N-type conductive region 3 are formed. In the 1st N-type conductive region 2, four 1st P-type conductive regions 4, 8, 9, and 10 are formed; and in the 2nd N-type conductive region 3, four 2nd P-type conductive regions 5, 11, 12 and 13 are formed symmetrically with respect to points. Further, the 1st P-type conductive regions 4, 8, 9, and 10 and 2nd P-type conductive regions 5, 11, 12, and 13 are arranged having their ends put one over each other as seen in a plane. This structure is equivalent to the formation of four parallel unit thyristors, shown by a PNPN structure 53 with an added PNP transistor, a current is shunt, and each unit thyristor area is hard to fire; consequently the surge tolerance is improved.
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