发明名称 |
CRYSTAL GROWTH APPARATUS AND METHOD THEREFOR |
摘要 |
PROBLEM TO BE SOLVED: To provide a crystal growth apparatus and method therefor which realize uniform growth of crystal element in the whole area crystal growth on the substrate. SOLUTION: The crystal growth apparatus for growth of crystal element on the predetermined area of a substrate includes a temperature detecting means for detecting temperature of the entire part of the predetermined area of the substrate where the crystal element grows, by scanning the entire area of the predetermined area of the substrate where a crystal element grows when the crystal element grows to the predetermined area of the substrate.
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申请公布号 |
JP2002367907(A) |
申请公布日期 |
2002.12.20 |
申请号 |
JP20010168784 |
申请日期 |
2001.06.04 |
申请人 |
INST OF PHYSICAL & CHEMICAL RES;NIPPON EMC LTD |
发明人 |
TAKEUCHI MICHIICHI;TANAKA SATORU;AOYANAGI KATSUNOBU;KUSAKABE TOSHIAKI;UCHIYAMA YASUSUKE |
分类号 |
H01L21/205;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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