| 摘要 |
PROBLEM TO BE SOLVED: To suppress systematic offset voltage and random offset voltage of an analog MOS semiconductor device which includes a plurality of MOS transistors, if some difference takes place in processing. SOLUTION: A plurality of MOS transistors are constituted, each using a plurality of micro-unit transistors MUPA 1. The transistor MUPA 1 has a channel width, equal to an inverse of the multiple of the shortest channel width that one of the plurality of MOS transistors has, and the transistor MUPA 1 is composed of two small transistors 1a, 1b connected in parallel and comprises a commonly used drain 8 at the center, gates 7, 7 located at both sides thereof, and sources 6, 6 located at the sides thereof, both ends.
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