| 摘要 |
PURPOSE: A method for manufacturing a PMOS transistor is provided to prevent defects due to fluorine(F) ions of dopants by using a screen oxide layer. CONSTITUTION: A gate electrode(4) having a gate oxide layer(3) is formed on a semiconductor substrate(1). A screen oxide layer is formed on the entire surface of the resultant structure. Then, BF2 ions are implanted by using a photoresist pattern. A P-type LDD(Lightly Doped Drain) region(5) is formed by activating the implanted BF2 ions. After removing the photoresist pattern and the screen oxide layer, a double spacer(6) including an oxide spacer(6a) and a nitride spacer(6b) is formed at both sidewalls of the gate electrode(4). Then, a source and drain region(7) are formed in the substrate by implanting BF2 ions and annealing.
|
