| 摘要 |
PURPOSE: A method of forming a diffusion barrier layer in semiconductor devices is provided to improve barrier properties by using an ALD(Atomic Layer Deposition). CONSTITUTION: A mono-layer Ti film is deposited on a semiconductor substrate by using TiCl4 as a precursor and H2 gas as a reaction gas(2a). A mono-layer TiN film is deposited on the resultant structure by using flowing TiCl4 as a precursor and flowing NH3 or N2 gas as a reaction gas(2b). A silane treatment processing is carried out(2c). By using the steps of 2a to 2c as a single cycle, the processing cycle is repeatedly performed until the deposition thickness of the Ti/TiN barrier layer is same to a predetermined thickness(2d). Then, Ti film is deposited on the resultant structure by using ALD(2e).
|
