发明名称 Method for calculating the P/N ratio of a static gate based on input voltages
摘要 A method for calculating the P/N ratios of static gates based on the voltages presented at the inputs of these static gates. The method identifies the PFETs and NFETs that are used when a particular voltage pattern drives the input of a static gate. After the FETS have been identified, a maximum and minimum P/N ratio is calculated. A maximum and minimum P/N ratio is determined in order provide more accurate models for simulating problems, for example, noise on the inputs. Using the P/N ratios created by this method, integrated circuit designers can create computer simulations that better model the electrical environment that integrated circuits operate in and most likely reduce the probability that the particular integrated circuit they are designing will have design errors.
申请公布号 US2002190745(A1) 申请公布日期 2002.12.19
申请号 US20010845384 申请日期 2001.04.30
申请人 KELLER S. BRANDON;ROGERS GREGORY D. 发明人 KELLER S. BRANDON;ROGERS GREGORY D.
分类号 G06F17/50;(IPC1-7):H03K19/003 主分类号 G06F17/50
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