Semiconductor device having LDD-type source/drain regions and fabrication method thereof

摘要

A semiconductor device comprising LDD-type source/drain regions. A gate pattern is formed in insulated relationship over a substrate. Low-concentration implant regions may be formed in a surface layer of the substrate on both sides of the gate pattern. A second spacer layer may be formed conformal to a surface of the substrate and gate pattern. A first spacer may be formed on the second spacer layer and along the sidewalls of the gate pattern. A high-concentration implant may then be formed within the low-concentration source/drain regions using the gate pattern and the first spacer as ion-implantation masks. Thereafter, the first spacer is removed. Second spacers may then be formed from the second spacer layer and metal silicide patterned within exposed surface areas of the substrate as defined by the second spacers. An interlayer insulation layer may then be formed over the substrate and patterned to form contact holes to source/drain regions between the gate patterns.