| 摘要 |
The invention concerns a growth method for a bulk II-VI type semiconductor material, including at least a first component and a second component, with the method including the following steps: supply in a crucible of a charge including the said components, with the proportions of the components in the charge being such that the first component is used as a solvent, placing of the crucible in a so-called "open tube" reactor, raising of the reactor temperature to obtain a temperature profile in the reactor ensuring the melting of the charge in the crucible and with the evaporation of the first component beginning, with the pressure inside the reactor being adjusted by the circulation of a gas so that the partial pressures of the components will be lower than the atmospheric pressure, with the partial pressure of the first component being greater than the partial pressure of the second component, the temperature profile being such that the melted charge is kept at the growth temperature equal to or slightly higher than its balance temperature and lower than the melting temperature of the desired material, with the temperature profile also being such that the crucible will show a cold point where the germination and the growth of the material takes place, with the reactor also having a cold point thereby allowing the condensation of the solvent.
|
