发明名称 III nitride film and a III nitride multilayer
摘要 A III nitride multilayer including a given substrate, a III nitride underfilm including Al element of 50 atomic percentages or over for all of the II elements, and a III nitride film including Al element in lower Al content than the Al content of the III nitride underfilm by 10 atomic percentages or over. A full width at half maximum in X-ray rocking curve of the III nitride film is set to 800 seconds or below at (100) plane. A full width at half maximum in X-ray rocking curve of the III nitride film is set to 200 seconds or below at (002) plane.
申请公布号 US2002190275(A1) 申请公布日期 2002.12.19
申请号 US20020156595 申请日期 2002.05.28
申请人 NGK INSULATORS, LTD. 发明人 SHIBATA TOMOHIKO;SUMIYA SHIGEAKI;ASAI KEIICHIRO;TANAKA MITSUHIRO
分类号 C30B29/38;C23C16/34;C30B25/02;H01L21/20;H01L21/205;H01L29/04;H01L29/20;H01L31/18;H01L33/16;H01L33/32;(IPC1-7):H01L31/032;H01L31/033;H01L31/072;H01L31/109 主分类号 C30B29/38
代理机构 代理人
主权项
地址