发明名称 |
III nitride film and a III nitride multilayer |
摘要 |
A III nitride multilayer including a given substrate, a III nitride underfilm including Al element of 50 atomic percentages or over for all of the II elements, and a III nitride film including Al element in lower Al content than the Al content of the III nitride underfilm by 10 atomic percentages or over. A full width at half maximum in X-ray rocking curve of the III nitride film is set to 800 seconds or below at (100) plane. A full width at half maximum in X-ray rocking curve of the III nitride film is set to 200 seconds or below at (002) plane.
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申请公布号 |
US2002190275(A1) |
申请公布日期 |
2002.12.19 |
申请号 |
US20020156595 |
申请日期 |
2002.05.28 |
申请人 |
NGK INSULATORS, LTD. |
发明人 |
SHIBATA TOMOHIKO;SUMIYA SHIGEAKI;ASAI KEIICHIRO;TANAKA MITSUHIRO |
分类号 |
C30B29/38;C23C16/34;C30B25/02;H01L21/20;H01L21/205;H01L29/04;H01L29/20;H01L31/18;H01L33/16;H01L33/32;(IPC1-7):H01L31/032;H01L31/033;H01L31/072;H01L31/109 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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