Plasma processing apparatus having parallel resonance antenna for very high frequency

摘要

Disclosed is a plasma process apparatus in which a semiconductor device manufacturing process using a plasma is performed. The apparatus includes: a vacuum chamber in which a semiconductor device manufacturing process is performed; a very high frequency (VHF) power source for generating a VHF power; a VHF parallel resonance antenna having a plurality of antenna coils connected in parallel to each other, and multiple variable capacitors insertion-installed in series in the antenna coils, the antenna being installed at an outer upper portion of the vacuum chamber, and supplied with the VHF power from the VHF power source; and an impedance matching box for impedance matching between the VHF power and the VHF parallel resonance antenna. Preferably, the variable capacitor is a coaxial capacitor including: a first insulator tube; first two metal tubes respectively extending from both ends of the first insulator tube; a second insulator tube surrounding the first insulator tube, and partially surrounding the first two metal tubes placed adjacent to both sides thereof; and a second metal tube surrounding the second insulator tube, and installed so as to glide along an outer side surface of the second insulator tube.