发明名称 LEAKY, THERMALLY CONDUCTIVE INSULATOR MATERIAL (LTCIM) IN SEMICONDUCTOR-ON-INSULATOR (SOI) STRUCTURE
摘要 A device and method for making a semiconductor-on-insulator (SOI) structure (10) having a leaky, thermally conductive material (LTCIM) layer (14) disposed between a semiconductor substrate (12) and a semiconductor layer (13).
申请公布号 WO02101819(A2) 申请公布日期 2002.12.19
申请号 WO2002US02991 申请日期 2002.01.31
申请人 ADVANCED MICRO DEVICES, INC. 发明人 JU, DONG-HYUK;EN, WILLIAM, GEORGE;KRISHNAN, SRINATH;RICCOBENE, CONCETTA, E.;KRIVOKAPIC, ZORAN;AN, JUDY, XILIN;YU, BIN
分类号 H01L21/18;H01L21/762;H01L29/786 主分类号 H01L21/18
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