发明名称 CHEMICAL TREATMENT EQUIPMENT AND PLATING TREATMENT EQUIPMENT AND CHEMICAL TREATMENT METHOD, PLATING TREATMENT METHOD AND RESIDUE REMOVAL TREATMENT METHOD AS WELL AS METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING PRINTED CIRCUIT BOARD USING THE SAME
摘要 PROBLEM TO BE SOLVED: To prevent the stagnation of air bubbles in a member to be treated and to decrease the treatment defects to be caused by the stagnation of the air bubbles with chemical treatment equipment (plating treatment equipment) and chemical treatment method (plating treatment method) using a closed type treating cup in which a treating liquid (plating liquid) is circulated under and at a certain pressure and velocity of flow. SOLUTION: At least either of the pressure and velocity of flow of the treating liquid (plating liquid) circulating in the closed type treating cup is periodically changed by a pump for supplying the treating liquid (plating liquid) to the closed type treating cup. The circulation direction of the treating liquid (plating liquid) flowing in the closed type treating cup is periodically changed. In the method of manufacturing semiconductor devices and a method of manufacturing printed circuit boards, the opened openings of blind holes are made to verge on the circulating treating liquid (plating liquid) and the stagnation of the air bubbles is eliminated by arranging the printed circuit boards within the closed type treating cup, by which the yield of production or the performance of products is improved.
申请公布号 JP2002363788(A) 申请公布日期 2002.12.18
申请号 JP20010363086 申请日期 2001.11.28
申请人 MITSUBISHI ELECTRIC CORP 发明人 OZAKI KATSUYA;NAKAMOTO TAKEO
分类号 C23C18/31;C02F1/40;C23C18/16;C25B9/00;C25B15/00;C25D5/08;C25D5/20;C25D7/12;C25D17/00;C25D21/04;C25D21/10;H01L21/20;H01L21/288;H05K3/18;H05K3/42;(IPC1-7):C25D5/08 主分类号 C23C18/31
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