SILICON-ON-POROUS-SILICON; METHOD OF PRODUCTION AND MATERIAL

摘要

PCT No. PCT/GB91/02029 Sec. 371 Date May 11, 1993 Sec. 102(e) Date May 11, 1993 PCT Filed Nov. 18, 1991 PCT Pub. No. WO92/09104 PCT Pub. Date May 29, 1992.The invention provides a method of producing silicon-on-porous-silicon material comprising the steps of (i) manufacturing a porous silicon layer on a suitable silicon wafer, such that the silicon wafer has a porous silicon surface and a non-porous silicon surface, (ii) applying an implanted ion dose to at least a portion of the porous silicon surface such that the dose is sufficient to cause amorphization of porous silicon. The material produced by the method of the invention can then be used for production of silicon-on-insulator material by oxidation of remaining porous silicon and recrystallization of amorphised silicon. Typically such material can be used for manufacture of e.g. SOI C-MOS devices and bipolar transistors. Alternatively, the method of the invention can be used for the manufacture of e.g. pyroelectric devices.