发明名称 |
Method for the formation of silica film, silica film, insulating film, and semiconductor device |
摘要 |
<p>A method for the formation of a silica film which comprises treating a film in a supercritical medium, the film comprising (A) a siloxane compound and (B) at least one member selected from the group consisting of (B-1) a compound compatible with or dispersible in ingredient (A) and having a boiling or decomposition temperature of from 150 to 500 DEG C and (B-2) a surfactant. The silica film has excellent mechanical strength showing a dielectric constant of generally 2.2 or lower, and hence is useful as a dielectric film in semiconductor devices and the like.</p> |
申请公布号 |
EP1267395(A2) |
申请公布日期 |
2002.12.18 |
申请号 |
EP20020012824 |
申请日期 |
2002.06.10 |
申请人 |
JSR CORPORATION |
发明人 |
HAYASHI, EIJI;SHIOTA, ATSUSHI;NISHIKAWA, MICHINORI;YAMADA, KINJI |
分类号 |
H01L21/31;C09D183/04;H01L21/311;H01L21/312;H01L21/316;(IPC1-7):H01L21/312 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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