| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve transmissivity of an IPS (in-plane switching) thin film transistor by preventing the occurrence of short circuit between gate/common (GC) normally generated in the manufacturing process of thin film transistors, and suppressing displaying of a circular smear of a liquid crystal display device caused by pin holes generated on a passivation film. SOLUTION: In the thin film transistor, a transistor 2, gate lines 1, common electrodes 8, source/drain electrodes 3 and 4, a source/drain wiring layer and a passivation film 14 are formed on an insulator substrate 12. The three layers, i.e., the electrodes 8, the lines 1 and the lines 4 are individually formed through the insulation films 12 and 14.</p> |
