发明名称 |
NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE HAVING MOBILE SPARE MEMORY ARRAY ADDRESS |
摘要 |
PURPOSE: A non-volatile semiconductor memory device is provided to assign freely a logical address of a spare memory array in front and in the rear of a main memory array by using an external command or an option signal. CONSTITUTION: A memory cell array is formed with a main memory array(10) and a spare memory array(20). An X decoder(2) is used for selecting word lines connected with NAND cell strings. A plurality of sense and latch portions(4,6) connected bit lines to sense and store input/output data of memory cell transistors. A plurality of column selectors(7,8) are connected with the sense and latch portions(4,6). A column decoder(30) is connected with the column selectors(7,8) to apply a column decoding signal. An address buffer(70) stores and buffers an external address. An address counter(100) receives the address of the address buffer(70) and outputs a column address counting signal to the column decoder(30). A clock generator(90) generates a clock according to the external address. A final Y address detector(40) detects a final column address and outputs a page end signal. A reset controller(75) resets the address counter(100) according to the page end signal. A gating portion(60) is used for gating a spare start read signal and a spare only read signal. A final point migration circuit(50) generates a final point signal to the final Y address detector(40). A spare to main controller(80) applies a spare to main signal to the reset controller(75).
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申请公布号 |
KR20020094356(A) |
申请公布日期 |
2002.12.18 |
申请号 |
KR20010032468 |
申请日期 |
2001.06.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO, TAE HUI;LEE, YEONG TAEK |
分类号 |
G06F12/16;G11C16/02;G11C16/04;G11C16/06;G11C16/08;(IPC1-7):G11C16/02 |
主分类号 |
G06F12/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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