| 摘要 |
PURPOSE: An apparatus for depositing a copper thin film of semiconductor devices is provided to reduce manufacturing costs and to improve a deposition speed by using CE(Chemical Enhancer) and plasma treatment. CONSTITUTION: The deposition apparatus comprises a load rock(11), an aligner(12), and a plurality of chambers. The chamber further includes a degas chamber(13) for removing particles formed on a wafer, a transfer chamber(14), a pre-cleaning chamber(15), a barrier metal deposition chamber(16), an AGL(Adhesion Glue Layer) flash chamber(17), a CECVD(Chemical Enhancer CVD) chamber(18), and a plasma treatment chamber(19). The AGL flash chamber(17) is deposited a flash copper film on a barrier metal so as to improve an adhesive force. The CECVD chamber(18) is deposited a CVD copper film on the flash copper film after treating CE. The plasma treatment chamber(19) is used for achieving a uniform supper filling and removing particles formed on the CVD copper film.
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