发明名称 |
Contact and via fabrication technologies |
摘要 |
A method of forming a contact opening between two conductive features over a semiconductor substrate. Oxide spacers are formed adjacent to the conductive features. A doped oxide layer is then deposited over the semiconductor substrate. Finally, the contact opening is etched through the doped oxide layer between the conductive features such that the oxide spacers are exposed within the contact opening.
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申请公布号 |
US6495470(B2) |
申请公布日期 |
2002.12.17 |
申请号 |
US19950580532 |
申请日期 |
1995.12.29 |
申请人 |
INTEL CORPORATION |
发明人 |
SADJADI S. M. REZA;MOINPOUR MANSOUR;LIN TE HUA;MOGHADAM FARHAD K. |
分类号 |
H01L21/768;H01L23/522;(IPC1-7):H01L21/461 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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