发明名称 HIGH POWER SEMICONDUCTOR CHIP PACKAGE
摘要 PURPOSE: A high power semiconductor chip package is provided to improve reliability, by preventing a crack of a thermal interface material itself or a chip crack even when the thermal interface material of a rigid type is used. CONSTITUTION: A semiconductor chip(20) is flip-chip bonded to a printed circuit board(PCB). A heat spreader(40) is attached to the rear surface of the semiconductor chip by interposing the thermal interface material(50) of a predetermined thickness. An encapsulating part encapsulates the semiconductor chip and its junction part is formed between the PCB and the heat spreader.
申请公布号 KR20020093474(A) 申请公布日期 2002.12.16
申请号 KR20010032248 申请日期 2001.06.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KWON, HEUNG GYU
分类号 H01L23/36;(IPC1-7):H01L23/36 主分类号 H01L23/36
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