发明名称 |
HIGH POWER SEMICONDUCTOR CHIP PACKAGE |
摘要 |
PURPOSE: A high power semiconductor chip package is provided to improve reliability, by preventing a crack of a thermal interface material itself or a chip crack even when the thermal interface material of a rigid type is used. CONSTITUTION: A semiconductor chip(20) is flip-chip bonded to a printed circuit board(PCB). A heat spreader(40) is attached to the rear surface of the semiconductor chip by interposing the thermal interface material(50) of a predetermined thickness. An encapsulating part encapsulates the semiconductor chip and its junction part is formed between the PCB and the heat spreader.
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申请公布号 |
KR20020093474(A) |
申请公布日期 |
2002.12.16 |
申请号 |
KR20010032248 |
申请日期 |
2001.06.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KWON, HEUNG GYU |
分类号 |
H01L23/36;(IPC1-7):H01L23/36 |
主分类号 |
H01L23/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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