| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoconduction switch which is free of tailing characteristics. SOLUTION: This photoconduction switch includes a 1st confinement layer 110 made of a 1st semiconductor material which has 1st band-gap energy (hereinafter Eg) and a 1st conduction type, a 2nd confinement layer 112 made of a 2nd semiconductor material having 2nd Eg, and a photoconductive layer 111 made of a 3rd semiconductor material having a 2nd conduction type reverse to the 1st conduction type; and the photoconduction layer is sandwiched between the 1st confinement layer and 2nd confinement layer, and the 3rd Eg is smaller than the 1st Eg and 2nd Eg. Further, the photoconduction layer includes a doped sublayer 114 which is in contact with the 1st confinement layer, and an undoped sublayer 115 which is adjacent to the 2nd confinement layer, and further includes a 1st electrode 118 and a 2nd electrode 120 which are separated from each other by a gap and arranged on the surface of the 1st confinement layer distant from the photoconduction layer.
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