发明名称 SUBSTRATE ELECTRODE OF PLASMA PROCESSING UNIT AND METHOD FOR SURFACE-TREATING AND EVALUATING SUBSTRATE ELECTRODE
摘要 PROBLEM TO BE SOLVED: To reduce defective parts of an oxidation film in the substrate electrode of a plasma processing unit. SOLUTION: The substrate electrode 11 of a plasma processing unit comprises a parent material 22 of aluminum, and an oxidation film 23 formed thereon. The substrate electrode 11 is provided, in a defective part 23a extending from the surface of the oxidation film 23 to the surface of the parent material 22, with a barrier layer 24 formed from the surface of the parent material 22 to the surface side of the oxidation film 23 in order to seal the defective part 23a.
申请公布号 JP2002359197(A) 申请公布日期 2002.12.13
申请号 JP20010162592 申请日期 2001.05.30
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KIMURA TEIICHI;HOUCHIN RIYUUZOU;ISHIDA TOSHIMICHI;SATO MINORU;FURUKAWA HIROTAKA
分类号 H05H1/46;C23C16/458;C25D11/04;C25D11/10;C25D11/12;H01L21/205;H01L21/302;H01L21/3065 主分类号 H05H1/46
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