发明名称 |
SUBSTRATE ELECTRODE OF PLASMA PROCESSING UNIT AND METHOD FOR SURFACE-TREATING AND EVALUATING SUBSTRATE ELECTRODE |
摘要 |
PROBLEM TO BE SOLVED: To reduce defective parts of an oxidation film in the substrate electrode of a plasma processing unit. SOLUTION: The substrate electrode 11 of a plasma processing unit comprises a parent material 22 of aluminum, and an oxidation film 23 formed thereon. The substrate electrode 11 is provided, in a defective part 23a extending from the surface of the oxidation film 23 to the surface of the parent material 22, with a barrier layer 24 formed from the surface of the parent material 22 to the surface side of the oxidation film 23 in order to seal the defective part 23a. |
申请公布号 |
JP2002359197(A) |
申请公布日期 |
2002.12.13 |
申请号 |
JP20010162592 |
申请日期 |
2001.05.30 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
KIMURA TEIICHI;HOUCHIN RIYUUZOU;ISHIDA TOSHIMICHI;SATO MINORU;FURUKAWA HIROTAKA |
分类号 |
H05H1/46;C23C16/458;C25D11/04;C25D11/10;C25D11/12;H01L21/205;H01L21/302;H01L21/3065 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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