发明名称 METHOD AND DEVICE FOR PROCESSING SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a method and a device for processing a substrate in which a highly accurate fine resist pattern can be obtained without using any special apparatus. SOLUTION: In order to form a wiring pattern of thin metal film on a substrate W, a resist film is applied, at first, to the substrate W where a thin metal film is formed over the entire surface region. A wiring pattern is then exposed for the resist film on the surface of the substrate W. Subsequently, the substrate W is subjected to post-exposure baking and coated with developer. The developed substrate W is cleaned. Thereafter, resist etching is performed by supplying ozone water to the substrate W and etching is executed following to post-baking.
申请公布号 JP2002359182(A) 申请公布日期 2002.12.13
申请号 JP20010223706 申请日期 2001.07.25
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 KANAYAMA KOJI;MATSUKA TAKESHI
分类号 G03F7/40;B05C9/12;B05D3/10;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/40
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