| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric substance storage device wherein precise work is enabled and to provide its manufacturing method. SOLUTION: In this manufacturing method of a ferroelectric substance storage device, a ferroelectric substance material film 14 is etched by using resist 16 as a mask. Deposit 18 is formed on a side surface of the resist 16 by using secondary product which is generated following the etching of the film 14. An under etching residual film 20 is eliminated by etching using the resist 16 on which the deposit 18 is stuck as a mask, and a lower electrode material film 12 is patterned.
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