| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor distributed Bragg reflector, whose electric resistance is reduced, a surface emission laser element whose operating voltage is reduced, whose element heating is reduced, and whose characteristics such as a high output and high speed modulation is made excellent, a surface emission semiconductor laser array capable of performing high speed modulation with low power consumption, an optical interconnection system capable of performing high speed transmission with high reliability, and an optical communication system capable of performing a high-speed operation with high reliability. SOLUTION: A hetero-spike buffer layer 12 having an intermediate valence band energy is arranged between semiconductor layers 11 and 13, whose band gap energies are different and which constitutes a semiconductor distributed Bragg reflector. The hetero-spike buffer layer 12 is constituted of composition inclined layers having valence band energies continued or stepped or the combination of them, and the region, where the change ratio of the valence band energy is large, is arranged at a side brought into contact with a layer (a semiconductor layer 11) whose band gap energy is small, and the region where the change ratio of the valence band energy is small is arranged at the side brought into contact with a layer (a semiconductor layer 13), whose band gap energy is large.
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