FERROELECTRIC SUBSTANCE STORAGE DEVICE AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To improve square property of a hysteresis curve of a ferroelectric substance layer, in a ferroelectric substance storage device having a matrix type memory cell array which is excellent in the level of integration. SOLUTION: A structure is used in which the memory cell array 200 and a peripheral circuit 100 are arranged as isolated from each other on a plane. The ferroelectric substance layer 34 is epitaxially grown on Si single crystal 10 via a buffer layer 30 and a first signal electrode 32. Consequently, the square property of a hysteresis curve of the ferroelectric substance layer 34 is improved, and a ferroelectric substance storage device which has both the memory characteristic and the level of integration is realized.