| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light reception element which has high detection sensitivity by reducing a dark current. SOLUTION: A semiconductor light emitting element 20 is equipped with a substrate 11 made of sapphire single crystal, etc., and a nitride semiconductor layer group which includes Al formed directly on the substrate 11 by epitaxial growth and has <=10<10> /cm<2> transition density. This nitride semiconductor layer group is composed of an n-type conductive layer 14, a light reception layer 15, and a p-type conductive layer 16. Then an n-type electrode 17 is formed on an exposed part of the n-type conductive layer 14, and a p-type electrode 18 is formed on the p-electrode 16.
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