| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for measuring the film quality in which the crystalline state of a silicon substrate can be determined easily at a high speed, and a film quality processing device employing that method. SOLUTION: A work 2 is irradiated with measuring light from the direction inclining to the direction perpendicular to the silicon film surface of the work 2, intensity or reflectance of light reflected from the silicon is measured and the film quality is identified from the measurement.
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